Electronic Design

Crolles2 Alliance reveals ultra-dense SRAM cell in 45 nm conventional bulk CMOS

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...
EurekAlert!

Demonstration of high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...
Design-Reuse

IMEC presents functional 22nm SRAM cells fabricated using EUV technology

LEUVEN, BELGIUM - APRIL 22, 2009 - Today, IMEC presented the world's first functional 22nm CMOS SRAM cells made using EUV lithography. The 0.099µm² SRAM cells are made with FinFETs and have both the ...
NextBigFuture

Intel surrounding CMOS with new device architectures using new materials such as magnetic memories, Qubits, GaN transistors

Keynote speaker, IEEE Fellow Kevin Zhang, vice president of Intel’s Technology and Manufacturing Group, also Intel Director of Circuit Technology who led processor development from the 90-to-22 ...
Electronics Weekly

EUV lithography makes first 22nm CMOS SRAM

Belgian research lab IMEC has revealed what it claims is the world’s first functional 22nm CMOS SRAM cells made using EUV lithography. “The 0.099µm 2 SRAM cells are made with FinFETs and have both the ...
Science Daily

Demonstration of high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...