The shielded-gate MOSFET can now provide the answer for designers of dc/dc power supplies in the 40 to 200-V range Regulatory bodies as well as end customers find themselves striving for higher ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has released “TCK421G” for 20V power lines as the first product in its new “TCK42xG Series” of MOSFET ...

Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...

Linear Technology’s LTC4440A-5 high-side, high-frequency N-channel MOSFET gate driver operates with an input voltage of up to 80 V, and continues to function with transients up to 100 V. Linear ...

Microchip has announced a 1,200V dual digital gate driver for electric transport. Called AgileSwitch 2ASC-12A2HP, “the gate driver provides multiple levels of control and a higher level of protection ...

Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for ...

Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...