Irvine, Calif. – Toshiba America Electronic Components has released two new lead (Pb)-free MOSFET products, one a high-voltage MOSFET family that improves switching speeds by up to 15 percent, and the ...

Advanced Power Electronics Co. (APEC) said high-power AI servers are driving demand for medium- and high-voltage power ...

First High-Voltage MOSFET Product from the Platform Meets Demands for High Efficiency, Power Density, and Robust Performance in Next‑Gen Power and Solar Inverter Applications First High-Voltage MOSFET ...

Using a new fabrication technique, NIMS has developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET ...

These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...

The next generation of 650 and 600-V gallium nitride (GaN) field-effect transistors (FETs) by Texas Instruments will be a key factor for automotive and industrial applications. These new GaN FET ...

Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.

First High-Voltage MOSFET Product from the Platform Meets Demands for High Efficiency, Power Density, and Robust Performance in Next‑Gen Power and Solar Inverter Applications Alpha and Omega ...